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Charge distribution across dislocation networks induced by a strained top layer in hexagonal boron nitride substrates

Isaac Soltero*, James G. McHugh, and Vladimir I. Fal'ko†

  • *Contact author: isaac.solteroochoa@manchester.ac.uk
  • †Contact author: vladimir.falko@manchester.ac.uk
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Phys. Rev. B 113, 235415 – Published 10 June, 2026

DOI: https://doi.org/10.1103/w8l8-pqdz

Abstract

Hexagonal boron nitride (hBN) flakes are key building blocks for encapsulating two-dimensional (2D) materials, providing atomically flat surfaces and an excellent dielectric environment for high-mobility field-effect transistors and tunneling devices. However, strain induced during mechanical exfoliation and assembly of van der Waals heterostructures may lead to plastic deformations of the hBN surface, injecting dislocation lines between the topmost layer and the underlying film. Since a monolayer of hBN is noncentrosymmetric and exhibits a piezoelectric response to deformation, individual dislocations and, in particular their networks, can generate electrostatic-potential modulations in the encapsulated 2D material. Here, we examine scenarios in which the top hBN layer is uniaxially strained and/or twisted, and show how lattice reconstruction into dislocation networks leads to the formation of piezoelectric-charge hotspots that effectively behave as charged defects.

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Phys. Rev. B 113, 235415– Published 10 June, 2026
  • Received 20 February 2026
  • Revised 27 April 2026
  • Accepted 22 May 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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