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    Origin of the anomalous Hall effect in a disordered ferromagnetic Ho1.25Au0.75Si1.55 single crystal

    Shoucai Yue1,2, Nan Zhou1, Lanxin Liu1,2, Yongqiang Pan1, Ruihuan Lan1,2, Yifan Deng1,2, Xiaoguang Zhu1, Wenhai Song1, Dingfu Shao1 et al.

    Yang Liu3, Yan Sun3, Xuan Luo1,*, and Yuping Sun1,4,5,†

    • *Contact author: xluo@issp.ac.cn
    • †Contact author: ypsun@issp.ac.cn

    Phys. Rev. B 114, 065109 – Published 7 July, 2026

    DOI: https://doi.org/10.1103/vxhm-jv21

    Abstract

    The anomalous Hall effect (AHE) serves as a pivotal transport phenomenon for deciphering the interplay between magnetic spin textures and topological bands in magnetic materials, with its origin attributed to intrinsic (momentum-space Berry curvature linked to Weyl or Dirac point) and extrinsic (spin-dependent scattering, i.e., skew scattering and side-jump) mechanisms. The complex magnetic structure and strong spin-orbit coupling effect of rare-earth magnetic materials make them an important platform for studying AHE. Here, we report a disordered Ho1.25Au0.75Si1.55 single crystal and investigate its magnetic and transport properties. In this single crystal, Ho-Au mixed occupancy on the 2c site and vacancies on the Si 2b sublattice give rise to pronounced chemical disorder. Ho1.25Au0.75Si1.55 belongs to the rare-earth ferromagnetic material with a magnetic ordering temperature of 8 K ( Tc ) and easy magnetization along the c axis. The magnetoresistance (MR) of Ho1.25Au0.75Si1.55 exhibits different behaviors at high and low temperatures in the H∥ab and I∥c configurations. At 3 K (T<Tc), the MR is initially positive and becomes negative with the magnetic field further increasing. This is due to the gradual disappearance of magnetic domain-wall scattering as the magnetization process approaches saturation. At 100 K (T>Tc), the MR remains negative as a result of the suppression of the scattering from spin fluctuations. With regard to the AHE, considering the scaling behavior between the anomalous Hall resistivity ρxzA and the longitudinal resistivity ρzz, the origin of the AHE in Ho1.25Au0.75Si1.55 can be described by the skew scattering mechanism. The dominance of skew scattering is likely driven by the structural disorder present in Ho1.25Au0.75Si1.55: the Ho-Au mixed occupancy and Si vacancies create a random potential landscape and break local chemical periodicity, which are expected to enhance asymmetric carrier scattering. The anomalous Hall angle ΘAH and anomalous Hall factor SH of Ho1.25Au0.75Si1.55 are 0.49% and 0.03 V−1, respectively, at 3 K, and both decrease as the temperature rises. The small ΘAH and SH are attributed to the finite s−f exchange coupling in this 4f localized-moment ferromagnet and to the enhanced scattering environment associated with Ho-Au mixed occupancy and Si vacancies. This work establishes disordered Ho1.25Au0.75Si1.55 as a platform for studying the role of structural disorder in skew-scatter-dominated AHE in rare-earth localized-moment ferromagnets.

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