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    Characterizing second-order Raman modes in monolayer MoSe2

    Renhui Liu1,2,*, Lin-Han Li3,4,*, Ye Zhang1,2, Jianqi Huang5,†, Miao-Ling Lin3,4, Nguyen Tuan Hung6, Huaihong Guo7,‡, Zhenhua Wang1,2, Zhidong Zhang1,2 et al.

    Riichiro Saito8, Ping-Heng Tan3,4,§, and Teng Yang1,2,∥

    • *These authors contributed equally to this work.
    • †Contact author: jqhuang@lam.ln.cn
    • ‡Contact author: hhguo@alum.imr.ac.cn
    • §Contact author: phtan@semi.ac.cn
    • ∥Contact author: yanghaiteng@msn.com

    Phys. Rev. B 112, 075416 – Published 12 August, 2025

    DOI: https://doi.org/10.1103/vvkp-9sth

    Abstract

    Sixteen second-order Raman modes of monolayer MoSe2 are observed and analyzed by experiment and calculation, respectively, for four laser energies from 2.33–2.60 eV. The Raman peaks labeled by Pi (i=1,2,3,4) at 280–320cm−1 and Si (i=1,2,3) at 400–480cm−1 are newly analyzed quantitatively by the first-principles calculation using qr2-code. The Pi bands are assigned to the second-order combination modes of TA (LA) and ETO′(ELO′), while the Si bands are assigned to the 2LA mode with different phonon wave vectors, which is explained by the combination of two-phonon density of states and electron-phonon coupling calculations. The overlapped Raman peak of the first-order mode E′ and the second-order mode S1 can be identified separately using helicity-dependent Raman spectroscopy. The mode assignments are further confirmed by space-group analysis and helicity-dependent selection rule.

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