Electrostatic control enables robust helical edge-channel transport in III-V quantum spin Hall insulators
Phys. Rev. B 114, 305302 – Published 5 November, 2026
DOI: https://doi.org/10.1103/vj43-4lv3
Abstract
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasisubstrates. In macroscopic Hall bars exceeding the phase coherence length, a multiprobe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized across a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III–V quantum spin Hall systems.
