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Charge-transfer properties and electron dynamics in ferromagnetic
Phys. Rev. B 112, 165115 – Published 14 October, 2025
DOI: https://doi.org/10.1103/vg4c-h785
Abstract
We investigated the element-specific electronic structure and charge-carrier dynamics of a single-crystal ferromagnet with complementary x-ray spectroscopy techniques. Hard x-ray photoemission (HAXPES) is used to provide crucial information on the bulk electronic structure and chemical bonding in that is compared against the isoelectronic paramagnet . The Co core-level line shows several satellite features for , showing explicit charge-transfer processes and local screening of the core hole by S ligands, whereas no such features are observed in . The satellite structures indicate the electronic configuration of divalent as a combination of and in addition to the nominal ionic state, where represents an S hole. We employ resonant Auger spectroscopy across the S -edge for to obtain electron delocalization times to adjacent Co atomic sites. The fast carrier dynamics are attributed to strongly screened Coulomb interactions and hence a facile carrier delocalization. The strong hybridization formed between the Co and S states with pronounced charge-transfer character reflects a self-doped system with a finite density of holes at the sulfur site (), in line with recent models that indicate a negative charge-transfer energy for . In addition to HAXPES data, we also report on experimental and theoretical -edge x-ray absorption and x-ray magnetic circular dichroism data for that demonstrate multiconfiguration effects in the excitation process. To enable a direct comparison of the experimental spectra, we used density functional theory calculations to obtain the projected density of states to describe the ground-state electronic structure. The existence of fast carrier dynamics and strong charge-transfer properties, demonstrated in this study, highlights the unique nature of with a wide potential in topological spintronics applications and integration in energy-related device platforms.
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References (62)
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