We investigate $26–110\mathrm{nm}$-thick tensile strained HgTe films, which possess surface-state transport characteristic of three-dimensional topological insulators. The high transport mobility and low intrinsic doping of the material permits investigating the Landau level spectrum around the charge neutrality point to low magnetic fields and with small electric fields from the top gate electrode. The experimental findings are in quantitative agreement with eight-orbital $\mathbf{k}·\mathbf{p}$ band structure theory. We quantify the parameter regimes where transport can be attributed solely to topological surface states and those where bulk states from quantum confinement have to be taken into account, as a function of layer thickness and carrier density.

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• Density of states
• Edge states
• Electronic structure
• Hall effect
• Landau levels
• Quantum transport
• Surface states
• Topological insulators
• Topological phases of matter
• Transport phenomena
• Band structure methods
• Hall bar
• Transport techniques
• k dot p method