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Dielectric screening in electromagnetic dressing of semiconductors

Quentin Courtade*, Umberto Dellasette†, Sotirios Fragkos, Stéphane Petit, Dominique Descamps, Yann Mairesse, and Samuel Beaulieu‡

  • *Contact author: quentin.courtade@u-bordeaux.fr
  • †Contact author: umberto.dellasette@u-bordeaux.fr
  • ‡Contact author: samuel.beaulieu@u-bordeaux.fr
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Phys. Rev. B 113, 235430 – Published 22 June, 2026

DOI: https://doi.org/10.1103/v4w2-zvxn

Abstract

Nonequilibrium manipulation of quantum materials via electromagnetic dressing provides an on-demand route to tailoring electronic band structures through Floquet engineering. Time- and angle-resolved photoemission spectroscopy offers a direct means to probe these light-dressed electronic states. In such photoemission experiments, electromagnetic dressing can also occur for quasifree electrons outside the material, giving rise to so-called Volkov states. In certain cases, most notably in metallic systems, strong surface screening reduces the penetration of the driving electromagnetic field into the solid, resulting in Volkov contributions that dominate over Floquet ones. This underscores the importance of carefully accounting for the material's dielectric response when analyzing the origin of light-induced band replicas using time- and angle-resolved photoemission spectroscopy. In this work, we systematically investigate the influence of materials' dielectric properties on Floquet-Volkov dressing of semiconductors, focusing on bulk layered van der Waals materials GeS, SnS, and 2H−WSe2. First, by combining a simple model based on Fresnel equations with an electron-scattering description of Volkov amplitudes, we use polarization-dependent Volkov sideband intensities to extract a lower bound for the real part of the materials' dielectric function. The extracted values typically lie between the reported dielectric constants for monolayer and bulk crystals. Furthermore, we demonstrate that increasing the pump fluence of the infrared pump laser enables the generation of high-order Volkov sidebands, which exhibit clear signatures of nonlinear light-matter interactions in their temporal dynamics, polarization dependence, and angular distributions. Finally, we show that for our experimental geometry, the quasitransparent nature of semiconductors in the below-band-gap driving regime allows the optical pump to propagate within the sample and undergo multiple total internal reflections. This process produces a series of temporally delayed Volkov replicas in pump-probe measurements via electromagnetic dressing of photoelectrons by the evanescent field associated with total internal reflections. Together, these systematic studies uncover several previously unexplored aspects of Floquet-Volkov dressing in solids, highlighting the central role of dielectric screening of the driving field.

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References (56)

  1. D. N. Basov, R. D. Averitt, and D. Hsieh, Towards properties on demand in quantum materials, Nat. Mater. 16, 1077 (2017).
  2. A. de la Torre, D. M. Kennes, M. Claassen, S. Gerber, J. W. McIver, and M. A. Sentef, Colloquium: Nonthermal pathways to ultrafast control in quantum materials, Rev. Mod. Phys. 93, 041002 (2021).
  3. C. Bao, P. Tang, D. Sun, and S. Zhou, Light-induced emergent phenomena in 2D materials and topological materials, Nat. Rev. Phys. 4, 33 (2021).
  4. T. Oka and H. Aoki, Photovoltaic Hall effect in graphene, Phys. Rev. B 79, 081406(R) (2009).
  5. Y. H. Wang, H. Steinberg, P. Jarillo-Herrero, and N. Gedik, Observation of Floquet-Bloch states on the surface of a topological insulator, Science 342, 453 (2013).
  6. E. J. Sie, J. W. McIver, Y.-H. Lee, L. Fu, J. Kong, and N. Gedik, Valley-selective optical Stark effect in monolayer WS2, Nat. Mater. 14, 290 (2015).
  7. F. Mahmood, C.-K. Chan, Z. Alpichshev, D. Gardner, Y. Lee, P. A. Lee, and N. Gedik, Selective scattering between Floquet–Bloch and Volkov states in a topological insulator, Nat. Phys. 12, 306 (2016).
  8. T. Oka and S. Kitamura, Floquet engineering of quantum materials, Annu. Rev. Condens. Matter Phys. 10, 387 (2019).
  9. M. S. Rudner and N. H. Lindner, Band structure engineering and non-equilibrium dynamics in Floquet topological insulators, Nat. Rev. Phys. 2, 229 (2020).
  10. M. Reutzel, A. Li, Z. Wang, and H. Petek, Coherent multidimensional photoelectron spectroscopy of ultrafast quasiparticle dressing by light, Nat. Commun. 11, 2230 (2020).
  11. J. W. McIver, B. Schulte, F.-U. Stein, T. Matsuyama, G. Jotzu, G. Meier, and A. Cavalleri, Light-induced anomalous Hall effect in graphene, Nat. Phys. 16, 38 (2020).
  12. S. Aeschlimann, S. A. Sato, R. Krause, M. Chávez-Cervantes, U. De Giovannini, H. Hübener, S. Forti, C. Coletti, K. Hanff, K. Rossnagel, A. Rubio, and I. Gierz, Survival of Floquet-Bloch states in the presence of scattering, Nano Lett. 21, 5028 (2021).
  13. S. Zhou, C. Bao, B. Fan, F. Wang, H. Zhong, H. Zhang, P. Tang, W. Duan, and S. Zhou, Floquet engineering of black phosphorus upon below-gap pumping, Phys. Rev. Lett. 131, 116401 (2023).
  14. S. Zhou, C. Bao, B. Fan, H. Zhou, Q. Gao, H. Zhong, T. Lin, H. Liu, P. Yu, P. Tang, S. Meng, W. Duan, and S. Zhou, Pseudospin-selective Floquet band engineering in black phosphorus, Nature (London) 614, 75 (2023).
  15. N. Bielinski, R. Chari, J. May-Mann, S. Kim, J. Zwettler, Y. Deng, A. Aishwarya, S. Roychowdhury, C. Shekhar, M. Hashimoto, D. Lu, J. Yan, C. Felser, V. Madhavan, Z.-X. Shen, T. L. Hughes, and F. Mahmood, Floquet–Bloch manipulation of the Dirac gap in a topological antiferromagnet, Nat. Phys. 21, 458 (2025).
  16. Y. Kobayashi, C. Heide, A. C. Johnson, V. Tiwari, F. Liu, D. A. Reis, T. F. Heinz, and S. Ghimire, Floquet engineering of strongly driven excitons in monolayer tungsten disulfide, Nat. Phys. 19, 171 (2023).
  17. H. Liu, H. Cao, and S. Meng, Floquet engineering of topological states in realistic quantum materials via light-matter interactions, Prog. Surf. Sci. 98, 100705 (2023).
  18. D. M. B. Lesko, T. Weitz, S. Wittigschlager, W. Li, C. Heide, O. Neufeld, and P. Hommelhoff, Optical control of electrons in a Floquet topological insulator, arXiv:2407.17917v2.
  19. C. Bao, M. Schüler, T. Xiao, F. Wang, H. Zhong, T. Lin, X. Cai, T. Sheng, X. Tang, H. Zhang, P. Yu, Z. Sun, W. Duan, and S. Zhou, Manipulating the symmetry of photon-dressed electronic states, Nat. Commun. 15, 10535 (2024).
  20. S. Ito, M. Schüler, M. Meierhofer, S. Schlauderer, J. Freudenstein, J. Reimann, D. Afanasiev, K. A. Kokh, O. E. Tereshchenko, J. Güdde, M. A. Sentef, U. Höfer, and R. Huber, Build-up and dephasing of Floquet-Bloch bands on subcycle timescales, Nature (London) 616, 696 (2023).
  21. O. Neufeld, H. Hübener, G. Jotzu, U. De Giovannini, and A. Rubio, Band nonlinearity-enabled manipulation of Dirac nodes, Weyl cones, and valleytronics with intense linearly polarized light, Nano Lett. 23, 7568 (2023).
  22. S. Fragkos, B. Fabre, O. Tkach, S. Petit, D. Descamps, G. Schönhense, Y. Mairesse, M. Schüler, and S. Beaulieu, Floquet-Bloch valleytronics, Nat. Commun. 16, 5799 (2025).
  23. D. Choi, M. Mogi, U. De Giovannini, D. Azoury, B. Lv, Y. Su, H. Hübener, A. Rubio, and N. Gedik, Observation of Floquet–Bloch states in monolayer graphene, Nat. Phys. 21, 1100 (2025).
  24. M. Merboldt, M. Schüler, D. Schmitt, J. P. Bange, W. Bennecke, K. Gadge, K. Pierz, H. W. Schumacher, D. Momeni, D. Steil, S. R. Manmana, M. A. Sentef, M. Reutzel, and S. Mathias, Observation of Floquet states in graphene, Nat. Phys. 21, 1093 (2025).
  25. S. T. Park, Interference in Floquet-Volkov transitions, Phys. Rev. A 90, 013420 (2014).
  26. C. Bao, H. Zhong, B. Fan, X. Cai, F. Wang, S. Zhou, T. Lin, H. Zhang, P. Yu, P. Tang, W. Duan, and S. Zhou, Floquet-Volkov interference in a semiconductor, Phys. Rev. B 111, L081106 (2025).
  27. K. Gadge, M. Merboldt, M. Schüler, J. P. Bange, W. Bennecke, M. A. Sentef, M. Reutzel, S. Mathias, and S. R. Manmana, A comparative study of perturbative and nonequilibrium Green's function approaches for Floquet sidebands in periodically driven quantum systems, arXiv:2601.14443.
  28. M. Keunecke, M. Reutzel, D. Schmitt, A. Osterkorn, T. A. Mishra, C. Möller, W. Bennecke, G. S. M. Jansen, D. Steil, S. R. Manmana, S. Steil, S. Kehrein, and S. Mathias, Electromagnetic dressing of the electron energy spectrum of Au(111) at high momenta, Phys. Rev. B 102, 161403(R) (2020).
  29. L. Wenthaus, N. M. Kabachnik, M. Borgwardt, S. Palutke, D. Kutnyakhov, F. Pressacco, M. Scholz, D. Potorochin, N. Wind, S. Düsterer, G. Brenner, O. Gessner, S. Molodtsov, W. Eberhardt, and F. Roth, Insights into the laser-assisted photoelectric effect from solid-state surfaces, Phys. Rev. B 110, 235406 (2024).
  30. C. Bao, F. Wang, H. Zhong, S. Zhou, T. Lin, H. Zhang, X. Cai, W. Duan, and S. Zhou, Light-induced ultrafast glide-mirror symmetry breaking in black phosphorus, ACS Nano 18, 32038 (2024).
  31. B. Fan, U. de Giovannini, H. Hübener, S. Zhou, W. Duan, A. Rubio, and P. Tang, Floquet optical selection rules in black phosphorus, Sci. Adv. 11, eadw2744 (2025).
  32. K. F. Mak, K. He, J. Shan, and T. F. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity, Nat. Nanotechnol. 7, 494 (2012).
  33. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, Valley polarization in MoS2 monolayers by optical pumping, Nat. Nanotechnol. 7, 490 (2012).
  34. T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, Valley-selective circular dichroism of monolayer molybdenum disulphide, Nat. Commun. 3, 887 (2012).
  35. S. Beaulieu, S. Dong, V. Christiansson, P. Werner, T. Pincelli, J. D. Ziegler, T. Taniguchi, K. Watanabe, A. Chernikov, M. Wolf, L. Rettig, R. Ernstorfer, and M. Schüler, Berry curvature signatures in chiroptical excitonic transitions, Sci. Adv. 10, eadk3897 (2024).
  36. S. Fragkos, Q. Courtade, O. Tkach, J. Gaudin, D. Descamps, G. Barrette, S. Petit, G. Schönhense, Y. Mairesse, and S. Beaulieu, Time- and polarization-resolved extreme ultraviolet momentum microscopy, Rev. Sci. Instrum. 96, 115201 (2025).
  37. O. Tkach, S. Fragkos, D. Biswas, J. Liu, O. Fedchenko, Y. Lytvynenko, S. Babenkov, D. Zimmer, Q. L. Nguyen, S. Chernov, D. Kutnyakhov, M. Scholz, N. Wind, A. Gloskovskii, F. Pressacco, J. Dilling, L. Bruckmeier, M. Heber, L. Wenthaus, G. Brenner, et al., Multimode objective lens for momentum microscopy and x-ray photoemission electron microscopy: Experiments, Rev. Sci. Instrum. 97, 033703 (2026).
  38. O. Tkach and G. Schönhense, Multimode objective lens for momentum microscopy and XPEEM: Theory, Ultramicroscopy 276, 114167 (2025).
  39. A. Comby, D. Rajak, D. Descamps, S. Petit, V. Blanchet, Y. Mairesse, J. Gaudin, and S. Beaulieu, Ultrafast polarization-tunable monochromatic extreme ultraviolet source at high-repetition-rate, J. Opt. 24, 084003 (2022).
  40. M. Magnozzi, M. Ferrera, L. Mattera, M. Canepa, and F. Bisio, Plasmonics of Au nanoparticles in a hot thermodynamic bath, Nanoscale 11, 1140 (2019).
  41. W. Al-Basheer, C. Viernes, M. Cheng, R. Zheng, S. Netzke, K. Pichugin, and G. Sciaini, Determining the out-of-plane longitudinal sound speed in GeS by broadband time-domain Brillouin scattering, ACS Omega 9, 15463 (2024).
  42. B. Munkhbat, P. Wróbel, T. J. Antosiewicz, and T. O. Shegai, Optical constants of several multilayer transition metal dichalcogenides measured by spectroscopic ellipsometry in the 300–1700 nm range: High index, anisotropy, and hyperbolicity, ACS Photonics 9, 2398 (2022).
  43. A. El-Bakkali, S. Sadki, L. B. Drissi, and F. Djeffal, Layers engineering optoelectronic properties of 2D hexagonal GeS materials, Phys. E (Amsterdam) 133, 114791 (2021).
  44. H. Koc, S. Simsek, S. Palaz, O. Oltulu, A. M. Mamedov, and E. Ozbay, Mechanical, electronic, and optical properties of the A4 B6 layered ferroelectrics: Ab initio calculation, Phys. Status Solidi C 12, 651 (2015).
  45. M. Arfaoui, N. Zawadzka, S. Ayari, Z. Chen, K. Watanabe, T. Taniguchi, A. Babiński, M. Koperski, S. Jaziri, and M. R. Molas, Optical properties of orthorhombic germanium sulfide: Unveiling the anisotropic nature of Wannier excitons, Nanoscale 15, 17014 (2023).
  46. H. Venghaus and U. Büchner, The dielectric function of GeS single crystals determined by electron energy loss spectroscopy, Phys. Status Solidi B 72, 603 (1975).
  47. R. E. Banai, L. A. Burton, S. G. Choi, F. Hofherr, T. Sorgenfrei, A. Walsh, B. To, A. Cröll, and J. R. S. Brownson, Ellipsometric characterization and density-functional theory analysis of anisotropic optical properties of single-crystal α-SnS, J. Appl. Phys. 116, 013511 (2014).
  48. H. T. Nguyen, V. L. Le, T. M. H. Nguyen, T. J. Kim, X. A. Nguyen, B. Kim, K. Kim, W. Lee, S. Cho, and Y. D. Kim, Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K, Sci. Rep. 10, 18396 (2020).
  49. A. Batool, Y. Zhu, and X. Ma, M. I. Saleem, and Chuanbao Cao, DFT study of the structural, electronic, and optical properties of bulk, monolayer, and bilayer Sn-monochalcogenides, Appl. Surf. Sci. Adv. 11, 100275 (2022).
  50. S. Ulstrup, J. C. Johannsen, F. Cilento, A. Crepaldi, J. A. Miwa, M. Zacchigna, C. Cacho, R. T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, P. D. C. King, F. Parmigiani, M. Grioni, and P. Hofmann, Ramifications of optical pumping on the interpretation of time-resolved photoemission experiments on graphene, J. Electron Spectrosc. Relat. Phenom. 200, 340 (2015).
  51. S. Singh, J. R. Potopowicz, L. G. Van Uitert, and S. H. Wemple, Nonlinear optical properties of hexagonal silicon carbide, Appl. Phys. Lett. 19, 53 (1971).
  52. S. V. Pepper, Optical analysis of photoemission, J. Opt. Soc. America 60, 805 (1970).
  53. D. J. Neivandt, M. L. Gee, M. L. Hair, and C. P. Tripp, Polarized infrared attenuated total reflection for the in situ determination of the orientation of surfactant adsorbed at the solid/solution interface, J. Phys. Chem. B 102, 5107 (1998).
  54. A. Holmgren and X. Yang, A polarized Fourier transform infrared spectrometry attenuated total reflection study of bentonite settled onto magnetite, J. Phys. Chem. C 112, 16609 (2008).
  55. S. V. Pepper, Enhanced photoemission by attenuated total reflection, Appl. Opt. 8, 1747 (1969).
  56. Q. Courtade, U. Dellasette, S. Fragkos, S. Petit, D. Descamps, Y. Mairesse, and S. Beaulieu, Dielectric screening in electromagnetic dressing of semiconductors [Data set], Zenodo, 2026, https://zenodo.org/records/18328301.

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Phys. Rev. B 113, 235430– Published 22 June, 2026
  • Received 18 February 2026
  • Revised 28 April 2026
  • Accepted 26 May 2026
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