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    Large anisotropic magnetoresistance in α-MnTe induced by strain

    Bao-Feng Chen1, Jie-Xiang Yu1,*, and Gen Yin2,†

    • *Contact author: jxyu@suda.edu.cn
    • †Contact author: gen.yin@georgetown.edu

    Phys. Rev. B 113, 054412 – Published 9 February, 2026

    DOI: https://doi.org/10.1103/v39q-ml7x

    Abstract

    α-MnTe is a p-type semiconducting altermagnet with a Néel temperature near 300K. Due to the altermagnetic nature, PT symmetry is broken and Kramers degeneracy is lifted in the valence band maxima along the Γ−K line and the A point. However, the energy difference is found to be small, and any small shift in the spectrum can dramatically change the linear-response transport properties. Here we show that a strain modulating the [0001] axis of the unit cell by ∼±0.5% can significantly change the transport signature by switching the thermal window between the two regions of the valence band. When the Γ−K line is dominating, the planar Hall effect and the anisotropic magnetoresistance can be enhanced by an order of magnitude, with the maximum up to ∼70%.

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