Electronic coupling across the In/Si(111) interface: Quantum well states and heavy-hole subbands in the Si space-charge layer
Phys. Rev. B 113, 245412 – Published 9 June, 2026
DOI: https://doi.org/10.1103/tzlv-2w6g
Abstract
We studied the electronic structure of multilayer indium films grown on Si(111) using angle-resolved photoelectron spectroscopy. Quantum well state (QWS) bands derived from In electrons were observed in the energy range of 0–3.4 eV, and their thickness-dependent energy shifts were well reproduced by the phase accumulation model. In addition, multiple bands with small energy spacings of were observed near the Si valence-band maximum. These states originate from the coupling between the In states and the quantized heavy-hole (HH) states in the space-charge layer of -doped Si(111). With increasing thickness, the HH-like states shifted to lower energies, while a new higher-energy state emerged when they energetically overlapped with a QWS. This repeated reorganization of the HH-like states is attributed to the thickness-dependent phase shift of the In -derived component at the In/Si interface. Furthermore, this phase shift is found to be closely related to the preferred growth of the 9-ML and 13-ML indium films.
