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Coexistence of superconductivity and topological band in a van der Waals Sn1−xInxBi2Te4 crystal

Hoyeon Jeon1, Saban Hus1,*, Jewook Park1, Qiangsheng Lu2, Seoung-Hun Kang2, Mina Yoon2, Robert G. Moore2, Jiaqiang Yan2, Michael A. McGuire2 et al.

An-Ping Li1,†

  • *Contact author: hussm@ornl.gov
  • †Contact author: apli@ornl.gov

Phys. Rev. B 112, 064505 – Published 4 August, 2025

DOI: https://doi.org/10.1103/tnv5-ntfv

Abstract

The realization of topological surface states and superconductivity within a single material platform is a crucial step toward achieving topologically nontrivial superconductivity. This can be achieved at an interface between a superconductor and a topological insulator or within a single material that intrinsically hosts both superconductivity and topological surface states. Here we use scanning tunneling microscopy to study Sn1−xInxBi2Te4 crystals. Spectroscopic evidence reveals the coexistence of topological surface states and superconductivity on the same surface of the crystals. The Te-terminated surface exhibits a single U-shaped superconducting gap with a size of up to 311µeV, alongside Dirac bands outside the gap. Analysis of the vortex structure and differential conductance suggests weak-coupling s-wave superconductivity. The absence of observed zero modes suggests that shifting the Fermi level closer to the Dirac point of the topological bands is necessary to realize a topological superconducting state.

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