Electrical interconnects for silicon spin qubits
Phys. Rev. B 113, 085301 – Published 2 February, 2026
DOI: https://doi.org/10.1103/tmpl-pjvw
Abstract
Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased to form a channel between the two dots; an end-to-end voltage difference across the nanowire results in an electric field that propels the electron from source dot to target dot. The electron is momentum incoherent but not necessarily spin incoherent; we evaluate threats to spin coherence due to spin-orbit coupling, valley physics, and nuclear spin impurities. We find that spin-orbit coupling is the dominant threat, but momentum-space motional narrowing due to frequent scattering partially protects the electron, resulting in characteristic decoherence lengths mm for plausible parameters.