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    Atomic-scale insights into the high dielectric permittivity of bismuth silicate glass

    J. R. Stellhorn*

    A. Masuno

    Y. Onodera and S. Kohara

    K. Yoshida

    Y. Yanaba and H. Inoue

    T. Ohkubo

    H. Taniguchi

    • Co-Creation Institute for Advanced Materials, Shimane University, Shimane 690-8504, Japan and Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8520, Japan

    • Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8520, Japan

    • *Contact author: jrstellhorn@mat.shimane-u.ac.jp

    Phys. Rev. B 113, 014201 – Published 20 January, 2026

    DOI: https://doi.org/10.1103/tg5g-dvgs

    Abstract

    The amorphous phase of bismuth silicate (Bi2SiO5) is characterized by an exceptionally large dielectric permittivity over a wide temperature range. This study explores the relationship between this remarkable property and the material's atomic-scale structure, which has been modeled from experimental x-ray and neutron scattering as well as x-ray absorption fine structure and nuclear magnetic resonance spectroscopy data in a reverse Monte-Carlo approach. The resulting structural model is analyzed to reveal short- and intermediate-range features on the atomic scale. Our results show that the exceptional dielectric performance stems from the asymmetric coordination of Bi−Ox polyhedra as well as a nanosegregation induced by SiO4 chains, which together boost local polarizability. These findings establish a direct link between disordered atomic structures and enhanced dielectric properties, and set a clear benchmark for amorphous materials.

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