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    Breit-Wigner-Fano Raman characteristics in semimetallic 1T−Ti1.03S2

    Keana Rylie Pasoquen1, Huynh Phuong Anh1, Kalingarayanpalayam Matheswaran Arun Kumar1, Nguyen Van Thanh1, Xiang-Lin Huang2, Guo-Jiun Shu3, Riichiro Saito1,4, Nguyen Tuan Hung5,*,†, and Hsiang-Lin Liu1,‡

    • *Present address: Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan.
    • †Contact author: nguyen.tuan.hung.e4@tohoku.ac.jp
    • ‡Contact author: hliu@ntnu.edu.tw

    Phys. Rev. B 114, 165426 – Published 30 September, 2026

    DOI: https://doi.org/10.1103/tdg3-1yg2

    Abstract

    We present temperature-dependent Raman spectra of semimetallic 1T−Ti1.03S2 single crystals measured from 6 to 300 K using a 532 nm excitation laser and identify a change in the phonon line shape near the Raman crossover temperature TcR = 180 K. At 6 K, the Raman spectrum exhibits the first-order Eg and A1g phonon modes, and a shoulder mode (Sh) at a frequency higher than that of the A1g phonon mode. All three phonon modes exhibit asymmetric line shapes that are described by the Breit-Wigner-Fano (BWF) function. The BWF asymmetry parameters 1/q of the A1g and Sh modes change above TcR = 180 K, suggesting mutual interference between these two modes. The peak intensity I0 of the Sh mode decreases more slowly than those of the Eg and A1g phonon modes below 180 K, whereas its spectral linewidth Γ0 increases more rapidly above 180 K. These observations support the assignment of the Sh mode to a two-phonon double-resonance Raman process involving the A1g phonon and an acoustic phonon. A piecewise power-law analysis of the temperature-dependent electrical resistivity gives a different crossover temperature, Tc = 132.6 K, suggesting a gradual crossover of the electronic structure of 1T−Ti1.03S2 over a broad temperature range from 100 to 200 K.

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