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    Emergent in-plane polar vortex state in a perovskite superlattice

    Shiji Xu1,*, Xin Wang2,*, Bin Xu3, Binhua Zhang4,†, and Changsong Xu1,5,‡

    • 1Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
    • 2School of Physical Science and Technology, Nantong University, Nantong 226019, China
    • 3Jiangsu Key Laboratory of Frontier Material Physics and Devices, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
    • 4Department of Physics, Fuzhou University, Fuzhou, Fujian 350108, China
    • 5Hefei National Laboratory, Hefei 230088, China

    • *These authors contributed equally to this work.
    • †Contact author: bhzhang@fudan.edu.cn
    • ‡Contact author: csxu@fudan.edu.cn

    Phys. Rev. B 114, 034103 – Published 6 July, 2026

    DOI: https://doi.org/10.1103/t198-356c

    Abstract

    Polar topological structures in perovskites offer promising routes toward next-generation nonvolatile memory and logic devices, yet thermally stable, lead-free, and electrically controllable systems remain rare. Here, by applying machine-learning interatomic potentials and high-throughput screening of over 1300 candidate compounds, we report the emergence of an in-plane polar vortex-antivortex state in BiAlO3/BiGaO3 superlattices, where each constituent is collinearly (anti)polarized. The vortex topology is found to be stabilized by cooperative coupling between polarization and octahedral rotations. This vortex phase remains the stable ground state up to 900 K and exhibits enhanced stability against deforming electric fields than the typical PbTiO3/SrTiO3 system. Global electric fields reversibly switch the system between the vortex state and a ferroelectric state. Localized biases write and erase stable nanoscale vortex bits with nonvolatile retention and clear spatial addressability. The presently discovered platform provides a promising route toward advanced storage devices.

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