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Pressure-driven metal-semiconductor-metal transition in : Localization and hybridization of interstitial electrons
Phys. Rev. B 114, 274105 – Published 9 November, 2026
DOI: https://doi.org/10.1103/s5v2-2l45
Abstract
, a prototypical electride with intrinsic interstitial anionic electrons (IAEs), exhibits pressure-induced electronic phase transitions. Previous studies have revealed a pressure-induced metal-semiconductor transition in at relatively low pressures; however, the evolution of its crystal structure and the role of interstitial electrons under extended compression remain unclear. Here, we combine first-principles calculations with crystal structure prediction to investigate the structural and electronic evolution of up to 120 GPa. We identify six stable high-pressure phases, including , , , , and for . Analysis of the pressure-dependent evolution of IAEs reveals a nonmonotonic electronic transition from metal to semiconductor and back to metal. Upon compression, extended interstitial electron states gradually transform into localized zero-dimensional states, resulting in electron confinement and gap opening. At higher pressures, the reduced interstitial volume promotes hybridization between interstitial electrons and Ca- states, leading to reentrant metallization. These results establish the high-pressure structural and electronic phase diagram of and provide a microscopic mechanism linking interstitial electron behavior to electronic transitions in electrides, advancing understanding of pressure-driven phenomena in these materials.