Anisotropic transport in gate-defined bilayer graphene cavities
Phys. Rev. B 113, 165402 – Published 2 April, 2026
DOI: https://doi.org/10.1103/rv22-w3p8
Abstract
Closing the gap between ray tracing simulations and experimentally observed electron jetting in bilayer graphene (BLG), we study all-electronic, gate-defined BLG cavities using tight-binding simulations and semiclassical equations of motion. Such cavities offer a rich playground to investigate anisotropic electron transport due to the trigonaly warped Fermi surfaces. In this work, we achieve two things: First, we verify the existence of triangular modes (as predicted by classical ray tracing calculations) in the quantum solutions of closed circular BLG cavities. Then, we explore signatures of said triangular modes in transport through open BLG cavities connected to leads. We show that the triangular symmetry translates into anisotropic transport and present an optimal setup for experimental detection of the triangular modes as well as for controlled modulation of transport in preferred directions.
