This paper proposes a technique for identifying the contributions of various physical phenomena to the total electrical potential difference that arises between electrical contacts at the ends of a ferromagnetic-metal/nonmagnetic-metal film structure under ferromagnetic resonance (FMR) conditions. The technique is based on a combined analysis of both FMR spectra and electrical potential difference signals. This technique allows for the use of two procedures, each providing a complete set of the desired information. Both procedures of the proposed technique were applied to a ${\mathrm{La}}_{0.7}{\mathrm{Sr}}_{0.3}{\mathrm{MnO}}_3$/${\mathrm{SrIrO}}_3$ film structure grown epitaxially in a single cycle on a single-crystal ${\mathrm{NdGaO}}_3$ substrate. Presented work shows that in this structure the electric voltage signal contains contributions from three physical processes: the inverse spin Hall effect, the anomalous Hall effect and anisotropic magnetoresistance. The quantitative agreement between the obtained results confirms the validity of the analytical expressions used.

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• Anisotropic magnetoresistance
• Anomalous Hall effect
• Inverse spin Hall effect
• Magnetism
• Spin current
• Spintronics
• Thin films
• Ferromagnetic resonance
• Landau-Lifschitz-Gilbert equation