${\mathrm{RuO}}_2$, a transition metal oxide, is gaining attention in spintronics because of its potential altermagnetic properties that affect spin-current behavior. Moreover, its capability to generate strong spin-orbit torques and significant spin Hall effects makes it a promising candidate for energy-efficient magnetic memory and logic devices. Additionally, the tunable thickness and crystallinity of ${\mathrm{RuO}}_2$ thin films enhance torque efficiency, enabling low-power magnetization switching. Spin pumping—a versatile technique for probing spin dynamics in quantum materials with high spin-orbit coupling—has attracted significant interest because of its straightforward, noninvasive nature and its effectiveness in overcoming impedance mismatch while enabling direct measurement of spintronic parameters. We present a systematic and detailed analysis of efficient spin-to-charge conversion in (110)-oriented ${\mathrm{RuO}}_2$ films, using amorphous CoFeB as the spin source. The spin Hall angle and spin-diffusion length are estimated to be $0.14\pm 0.01$ and $4.58\pm 0.40$ nm, respectively. A spin Hall conductivity of $998.89\pm 58.23\frac{\hslash }{e}{\mathrm{\Omega }}^{-1}{\mathrm{cm}}^{-1}$ is obtained, consistent with theoretical predictions. The interfacial spin transparency is evaluated to be $90\%$, while spin memory loss at the ${\mathrm{RuO}}_2/\mathrm{CoFeB}$ interface is found to be only $15\%$, indicating minimal spin scattering at the interface.

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• Magnetic interactions
• Magnetic order
• Magnetism
• Magnetization dynamics
• Spin dynamics
• Spin-orbit coupling
• Spintronics
• Ferromagnetic resonance
• Physical deposition
• Physical vapor deposition
• Sputtering
• X-ray diffraction
• X-ray reflectivity