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    Revisiting nonvolatile control of magnetism in bilayer CrI3 through a ferroelectric substrate

    Bin Wu1, Wenfang Deng1, Zhigang Gui2,*, and Li Huang1,2,†

    • *Contact author: guizhigang@quantumsc.cn
    • †Contact author: huangl@sustech.edu.cn

    Phys. Rev. B 113, 134414 – Published 8 April, 2026

    DOI: https://doi.org/10.1103/rmpm-z25r

    Abstract

    Nonvolatile manipulation of magnetic orderings in two-dimensional (2D) van der Waals (vdW) materials presents a promising avenue for advanced spintronic applications. Bilayer CrI3 (BL-CrI3) exhibits an interlayer antiferromagnetic (AFM) ground state, distinct from the interlayer ferromagnetic (FM) ordering of its bulk counterpart, making it a compelling system for studying the magnetic phase transition. While integrating BL-CrI3 with a ferroelectric layer like α−In2Se3 has been proposed as a strategy to modulate these transitions, prior computational studies have yielded conflicting results. Here, we systematically investigate BL-CrI3/α−In2Se3 heterostructures using first-principles calculations, examining the effects of lattice strain, spin-orbit coupling (SOC), and electric polarization on magnetic stability. Our findings reveal that larger in-plane lattice constants favor the AFM state, while SOC promotes FM ordering. Notably, a bilayer In2Se3 substrate proves highly effective in achieving nonvolatile magnetic ground-state reversal. These results decipher the critical roles of strain, SOC and electric polarization in the manipulation of magnetism in 2D materials and provide essential insights for designing 2D vdW heterostructures with robust magnetoelectric properties.

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