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    Pressure-driven amorphous superconductivity in the topological semimetal VP4

    Na Zuo1,2,*, Bowen Zheng1,2,*, Chutong Zhang1,2,*, Xiangzhuo Xing1,2,†, Yalei Huang3, Haoran Yu1,2, Bin Li4,‡, Xiaolei Yi5, Yan Meng6 et al.

    Xiaoran Zhang1,2, Bingchao Yang1,2, Xin Chen1,2, Xiaofeng Xu3, and Xiaobing Liu1,2,§

    • *These authors contributed equally to this work.
    • †Contact author: xzxing@qfnu.edu.cn
    • ‡Contact author: libin@njupt.edu.cn
    • §Contact author: xiaobing.phy@qfnu.edu.cn

    Phys. Rev. B 112, 184508 – Published 10 November, 2025

    DOI: https://doi.org/10.1103/rc5t-65bw

    Abstract

    Engineering superconductivity in pressurized topological materials is widely recognized as a promising pathway for achieving topological superconductivity. Herein, we report the pressure-tuned evolution of the structural and electronic properties of the topological semimetal VP4. Our results demonstrate that the crystal structure remains stable up to approximately 47.2 GPa, beyond which an irreversible transition to an amorphous phase takes place. Notably, the onset of amorphization is accompanied by a concurrent transition in carrier-type from holes to electrons, coupled with the emergence of superconductivity. This phenomenon provides direct evidence for pressure-induced amorphous superconductivity. With further compression, the superconducting transition temperature Tc increases monotonically, reaching a maximum of ∼4.9 K under a pressure of around 76.5 GPa. Additionally, density functional theory calculations reveal that the topologically nontrivial state persists under pressure, retaining strong topological characteristics throughout the crystalline phase. Our findings establish VP4 as a distinctive platform for investigating the interplay among amorphous, superconductivity, and topology.

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