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    Pressure-driven phase structure dynamics of a van der Waals α/β−In2Se3 heterojunction

    Zheting Zhang (张哲艇)1, Yuting Yan (严雨婷)2, Liyuan Chen (陈丽媛)2, Kai Jiang (姜凯)1,*, Liyan Shang (商丽燕)2, Liangqing Zhu (朱亮清)2, Yawei Li (李亚巍)2, and Zhigao Hu (胡志高)2,3,†

    • 1College of Arts and Sciences, Shanghai Dianji University, Shanghai 200240, China
    • 2Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics, East China Normal University, Shanghai 200241, China
    • 3Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China

    • *Contact author: 32077@sdju.edu.cn
    • †Contact author: zghu@ee.ecnu.edu.cn

    Phys. Rev. B 114, 094104 – Published 10 August, 2026

    DOI: https://doi.org/10.1103/r3d1-qmsx

    Abstract

    Indium selenide (In2Se3) exhibits significant phase transition behavior and relatively weak interlayer interactions, resulting in greater compressibility under pressure compared to other transition metal dichalcogenides. Hydrostatic pressures up to 11.9 GPa were applied to probe the structural evolution and stability of α/β−In2Se3 van der Waals heterojunctions. The shift of the A13 mode to the Eg2 mode near 2 GPa marks the transformation of α−In2Se3 into β′−In2Se3. The disappearance of the E2, A12, and E4 modes around 6 GPa signals the subsequent transition to β−In2Se3. The Raman intensity mapping of the A11 → Ag4 → Eg2 mode under pressure further delineates the complete phase transition pathway, confirming that the heterojunction remains stable between 0 and 2 GPa and converts entirely to β−In2Se3 beyond 6 GPa. Finally, an intrinsic correlation mechanism among pressure, structural distortion, electronic band structure, and thermodynamic stability is established via first-principles calculations. These findings advance the understanding of stress-mediated structural evolution in α/β−In2Se3 heterojunctions and support the design of strain-engineered devices.

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