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    Interplay of charge carrier and antiferromagnetic order in metallic triangular lattice GdZn3P3

    Jiesen Guo1, Fan Yang1, Yuzhou He2, Xinyang Liu1,2,3, Zheng Deng2,4, Qinghua Zhang2,*, Xiancheng Wang2,4, Xianlei Sheng1,†, Wei Li3,5,6 et al.

    Changqing Jin2,4 and Kan Zhao1,‡

    • *Contact author: zqh@iphy.ac.cn
    • †Contact author: xlsheng@buaa.edu.cn
    • ‡Contact author: kan_zhao@buaa.edu.cn

    Phys. Rev. B 113, 085147 – Published 25 February, 2026

    DOI: https://doi.org/10.1103/qfbt-xn97

    Abstract

    We investigate a hexagonal ScAl3C3-type antiferromagnet GdZn3P3 single crystal. Compared with antiferromagnetic topological material EuM2X2 (M=Zn, Cd; X=P, As), the GdZn3P3 features an additional ZnP3 trigonal planar units. Notably, single-crystal x-ray diffraction analysis reveals that Zn and P atoms within a trigonal planar layer exhibit significant anisotropic displacement parameters with space group P63/mmc. Meanwhile, a scanning transmission electron microscopy experiment demonstrates the presence of interstitial P atoms above and below the ZnP honeycomb lattice, suggesting potential ZnP bond instability within the ZnP3 trigonal layers. Concerning the triangular Gd3+ layer, the magnetic susceptibility χ(T) and heat capacity measurements reveal an A-type antiferromagnetic order at TN=4.5K. Below TN, the in-plane χ(T) is nearly 4 times the χ(T) along c axis, indicative of strong magnetic anisotropy for salt-flux-grown GdZn3P3 crystal. The density function theory calculation shows that GdZn3P3 is an indirect semiconductor with a band gap 0.27 eV, supported by the resistivity measurement on the polycrystal sample. Interestingly, Hall measurements of metallic GdZn3P3 crystals grown via salt flux reveal a low concentration of hole carriers, consistent with the previously mentioned presence of interstitial P atoms. Furthermore, these crystals exhibit a pronounced nonlinear anomalous Hall effect below TN. In contrast, GdZn3P3 crystals grown by chemical vapor transport display weak semiconducting behavior. Despite exhibiting a similar TN, the in-plane χ(T) below TN in the vapor-transport-grown crystal is approximately half in magnitude compared to that of the salt-flux-grown sample, which supports the hypothesis of charge carrier-mediated Ruderman-Kittel-Kasuya-Yosida interactions. These findings collectively establish GdZn3P3 as a compelling model system for investigating the coupling between charge carriers and triangular lattice magnetism within a two-dimensional framework.

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