Interplay of charge carrier and antiferromagnetic order in metallic triangular lattice
Phys. Rev. B 113, 085147 – Published 25 February, 2026
DOI: https://doi.org/10.1103/qfbt-xn97
Abstract
We investigate a hexagonal -type antiferromagnet single crystal. Compared with antiferromagnetic topological material , the features an additional trigonal planar units. Notably, single-crystal x-ray diffraction analysis reveals that Zn and P atoms within a trigonal planar layer exhibit significant anisotropic displacement parameters with space group . Meanwhile, a scanning transmission electron microscopy experiment demonstrates the presence of interstitial P atoms above and below the ZnP honeycomb lattice, suggesting potential ZnP bond instability within the trigonal layers. Concerning the triangular layer, the magnetic susceptibility χ(T) and heat capacity measurements reveal an A-type antiferromagnetic order at . Below , the in-plane χ(T) is nearly 4 times the χ(T) along axis, indicative of strong magnetic anisotropy for salt-flux-grown crystal. The density function theory calculation shows that is an indirect semiconductor with a band gap 0.27 eV, supported by the resistivity measurement on the polycrystal sample. Interestingly, Hall measurements of metallic crystals grown via salt flux reveal a low concentration of hole carriers, consistent with the previously mentioned presence of interstitial P atoms. Furthermore, these crystals exhibit a pronounced nonlinear anomalous Hall effect below . In contrast, crystals grown by chemical vapor transport display weak semiconducting behavior. Despite exhibiting a similar , the in-plane χ(T) below in the vapor-transport-grown crystal is approximately half in magnitude compared to that of the salt-flux-grown sample, which supports the hypothesis of charge carrier-mediated Ruderman-Kittel-Kasuya-Yosida interactions. These findings collectively establish as a compelling model system for investigating the coupling between charge carriers and triangular lattice magnetism within a two-dimensional framework.