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    Intervalley scattering as the origin of anomalous charge transport in n-type Mg3Sb2

    Zongwei Zhang1, Miao Zhang2, Yifan Zhou3, Minhui Yuan4, Jianfeng Cai1, Chuandong Zhou1, Lianghan Fan1, Zhoumin Jiang1, Guoqiang Liu1,* et al.

    Xinyu Wang2,† and Jun Jiang1,‡

    • *Contact author: liugq@nimte.ac.cn
    • †Contact author: wangxy@hbnu.edu.cn
    • ‡Contact author: jjun@nimte.ac.cn

    Phys. Rev. B 113, 085202 – Published 2 February, 2026

    DOI: https://doi.org/10.1103/qf9y-r3pk

    Abstract

    We identify inter-valley scattering as the microscopic origin of anomalous charge transport in n-type Mg3(Sb,Bi)2 thermoelectrics. This mechanism depends critically on carrier concentration, as energy conservation governs phonon-assisted inter-valley transitions. We show that reducing the carrier density can eliminate the transport anomaly. A key prediction of this framework, namely the existence of a conductivity minimum below room temperature, had not been observed previously, while this study reveals clear minima at 190 K in Mg3.1Sb1.99Te0.01 and 150 K in Mg3.1Sb1.49Bi0.5Te0.01. The observed temperatures of these minima are in good agreement with the phonon spectra. Together, these results provide a complete and self-consistent explanation of the long-standing transport anomaly in Mg3(Sb,Bi)2.

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