Intrinsic moiré domains of twisted boron nitride
Phys. Rev. B 114, 295403 – Published 6 November, 2026
DOI: https://doi.org/10.1103/qf9t-rsc5
Abstract
Moiré ferroelectric systems exhibit stacking-dependent interfacial polarization at the atomic thickness limit, inspiring a promising platform for next-generation devices. This unique ferroelectricity has been explored using a range of techniques. However, the built-in electric field arising from piezoelectric force microscopy (PFM) tip-sample contact often leads to amplitude imbalance and reduced phase contrast, complicating reliable characterization. Here, using twisted hexagonal boron nitride as a model system, we develop a multimodal scanning probe microscopy (SPM) strategy that combines noncontact Kelvin probe force microscopy (KPFM) with contact-mode PFM. By introducing a DC bias during PFM, we effectively compensate the built-in field. This compensation restores intrinsic moiré ferroelectric states, evidenced by straighter domain walls and a nearly 180° phase difference between adjacent domains. Our findings highlight the critical role of work function evaluation in PFM measurements and provide a reliable approach for probing moiré ferroelectric domains and their polarizations.