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    Intrinsic moiré domains of twisted boron nitride

    Xiao-Yu Ma1, Lu-Qi Wei1, Wen-Cheng Fan1, Wei-Hao Sun1, Zhao Guan1,*, Ya-Qiong Wang1, Bin-Bin Chen1, Ping-Hua Xiang1,2, Chun-Gang Duan1,2 et al.

    Ni Zhong1,2,†

    • 1Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics, East China Normal University, Shanghai 200241, China
    • 2Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China

    • *Contact author: zguan@ee.ecnu.edu.cn
    • †Contact author: nzhong@ee.ecnu.edu.cn

    Phys. Rev. B 114, 295403 – Published 6 November, 2026

    DOI: https://doi.org/10.1103/qf9t-rsc5

    Abstract

    Moiré ferroelectric systems exhibit stacking-dependent interfacial polarization at the atomic thickness limit, inspiring a promising platform for next-generation devices. This unique ferroelectricity has been explored using a range of techniques. However, the built-in electric field arising from piezoelectric force microscopy (PFM) tip-sample contact often leads to amplitude imbalance and reduced phase contrast, complicating reliable characterization. Here, using twisted hexagonal boron nitride as a model system, we develop a multimodal scanning probe microscopy (SPM) strategy that combines noncontact Kelvin probe force microscopy (KPFM) with contact-mode PFM. By introducing a DC bias during PFM, we effectively compensate the built-in field. This compensation restores intrinsic moiré ferroelectric states, evidenced by straighter domain walls and a nearly 180° phase difference between adjacent domains. Our findings highlight the critical role of work function evaluation in PFM measurements and provide a reliable approach for probing moiré ferroelectric domains and their polarizations.

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