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Probing band topology in ABAB- and ABBA-stacked twisted double bilayer graphene

Jundong Zhu1,2,3,*, Le Liu1,2,*, Yalong Yuan1,2,*, Xin Lu4,*, Jingwei Dong1,2, Yanbang Chu1,2, Luojun Du1,2, Kenji Watanabe5, Takashi Taniguchi6 et al.

Dongxia Shi1,2,3, Quansheng Wu1,2, Jianpeng Liu4,7, Guangyu Zhang1,2,3,†, and Wei Yang1,2,3,‡

  • *These authors contributed equally to this work.
  • †Contact author: gyzhang@iphy.ac.cn
  • ‡Contact author: wei.yang@iphy.ac.cn

Phys. Rev. B 112, L081108 – Published 14 August, 2025

DOI: https://doi.org/10.1103/qc2g-qjg2

Abstract

Twisted graphene moiré superlattice has been demonstrated as an exotic platform for investigating correlated states and nontrivial topology. Among the moiré family, twisted double bilayer graphene (TDBG) is a tunable flat band system expected to show stacking-dependent topological properties. However, electron correlations and the band topology are usually intertwined in the flat band limit, rendering the unique topological property due to stacking still elusive. Focusing on a large-angle TDBG with weak electron correlations, we probe the Landau level (LL) spectra in two differently stacked TDBG, i.e., ABBA- and ABAB-TDBG, to unveil their distinct topological properties. For ABBA-TDBG, we observe nontrivial topology at zero electric field D=0, evident from both the emergence of Chern bands from half-fillings v=±2 and a giant orbital magnetic momentum. For ABAB-TDBG, by contrast, we find that the moiré band is topologically trivial at D=0, supported by the absence of LLs from half-fillings and the persistence of the gap at CNP above the critical magnetic fields. In addition, we also observe an evolution of the trivial-to-nontrivial topological transition at D≠0, confirmed by the emerged Landau fans originating from quarter-filling v=1. Our result demonstrates, for the first time, the unique stacking-dependent topology in TDBG, offering a promising avenue for future investigations on topological states, as well as correlated states, in dispersive band limits.

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