Recent experimental advances in mixed-stacked tetralayer graphene (4MG) revealed a lack of space-inversion symmetry, leading to intrinsic polarization and an associated band gap. Motivated by these results, we conducted a detailed investigation of the Lifshitz transition under out-of-plane electric fields $E$ and doping $n$ using first-principles calculations. Our calculations reveal that the electronic properties of 4MG are highly tunable, featuring multiple field-driven insulator-metal transitions. The most significant phenomena emerge on the hole-doped side, where a negative electric field unlocks a Lifshitz transition with a unique dual character: an extreme sensitivity that allows it to be triggered by minimal doping near the charge neutrality point and the capacity for a colossal density of states (DOS). The resulting DOS peak is more than an order of magnitude larger than that in benchmark tetralayer rhombohedral graphene. These findings establish 4MG as a versatile platform with remarkably tunable electronic properties, ideal for exploring correlation physics and designing advanced electronic devices.

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• Fermi surface
• Graphene
• Layered crystals
• Density functional theory