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    Temperature dependence of charge-to-spin conversion in a rhombohedral (110) bismuth thin film

    Katsuhiro Tatsuoka1, Naoki Fukumoto1, Shoya Sakamoto2, Shinji Miwa2, Yuki Fuseya3, Junji Fujimoto4, Ryo Ohshima1,5, Jorge Puebla1,5, Yuichiro Ando6 et al.

    Masashi Shiraishi1,5,*

    • *Contact author: shiraishi.masashi.4w@kyoto-u.ac.jp

    Phys. Rev. B 113, 134422 – Published 14 April, 2026

    DOI: https://doi.org/10.1103/qbrm-j8bw

    Abstract

    The amplitude of charge-to-spin conversion, namely, the spin Hall effect (SHE), in bismuth (Bi) strongly depends on its crystal orientation. The conversion efficiency at room temperature in rhombohedral (110) bismuth is notably large, as expected from its large spin-orbit interaction, and such a large SHE is ascribed to the large effective g factor in bismuth [Fukumoto et al., Proc. Nat. Acad. Sci. USA 120, e2215030120 (2023)]. Despite the successful observation of the large conversion efficiency, a more detailed physical mechanism of the SHE in (110) bismuth is still elusive and under debate. In this work, we investigate the temperature dependence of charge-to-spin conversion in an epitaxial Bi(110)/Ni bilayer system using the second harmonic Hall method, revealing that both spin Hall conductivity and spin diffusion length augment with decreasing temperature. This finding suggests that spin scattering in (110) bismuth is dominated by the Elliott-Yafet mechanism, and the charge-to-spin conversion is mainly attributed to skew scattering.

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