In the field of spintronics and quantum information, the realization and control of the quantum anomalous Hall (QAH) effect stands as a crucial development. Incorporating multiple degree of freedom, van der Waals (vdW) heterostructures based on two-dimensional (2D) topological axion antiferromagnet (AFM) and ferroelectric materials offer an excellent platform for harnessing the QAH effect. In this work, we proposed a unique mechanism to tune the intrinsic layer polarization anomalous Hall effect (LPAHE) in an axion AFM based on the balance of the work function difference and electrostatic potential difference, which was demonstrated in a real vdW heterostructure material with two septuple $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ layers and one ferroelectric $\mathrm{I}{\mathrm{n}}_2\mathrm{T}{\mathrm{e}}_3$ layer by using first-principles calculations. The electron injection induced by ferroelectric polarization drives a magnetic phase transition to obtain one nonzero net Hall conductivity and a reasonably high Curie temperature (18 K). In this work, we suggest a strategy for exploring the ferroelectric control topological properties in layered AFMs.

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• Electronic structure
• Ferroelectricity
• Magnetism
• Spintronics
• Topological insulators
• Topological phase transition