Two-component nuclear spin relaxation dynamics in GaAs:Mn
Phys. Rev. B 114, 055201 – Published 17 July, 2026
DOI: https://doi.org/10.1103/q6n8-n8jv
Abstract
This work presents experimental results on nuclear spin-lattice relaxation times in manganese-doped bulk gallium arsenide (GaAs:Mn), investigated using polarized photoluminescence measurements in an external oblique magnetic field. The experimental data reveal that the nuclear spin system relaxation in the absence of optical pumping is characterized by two distinct timescales: a fast component on the order of milliseconds and a slow component on the order of tens of milliseconds. Increasing the external magnetic field leads to longer spin relaxation times. Our analysis demonstrates that the dominant relaxation mechanism arises from quadrupole interactions induced by fluctuating electric fields during the phonon-assisted tunneling of holes between acceptor sites.
