Growth and hydrostatic pressure study of the single-crystal type-II superconductor
Phys. Rev. B 114, 034504 – Published 6 July, 2026
DOI: https://doi.org/10.1103/q44s-63jc
Abstract
We report the growth and physical properties of single-crystalline crystallizing in the space group, which comprises alternating Ta-S layers and Bi layers with each Bi atom connected to adjacent S atoms. Temperature-dependent electrical resistivity measurements reveal a superconducting transition at 0.84 K, with an upper critical field of 231 Oe under an out-of-plane magnetic field. Magnetization measurements confirm its nature as a type-II superconductor, with anisotropic Ginzburg-Landau parameters and . Hall measurements reveal holes as the dominant species of charge carriers at room temperature. Hydrostatic pressure is applied, under which both the superconducting transition temperature and upper critical field increase sharply under low pressure before undergoing slight suppression under higher pressure. DFT calculations reveal nontrivial topological surface states on the (100) surface in , which may offer a new avenue for exploring potential topological superconductivity in layered transition metal dichalcogenides.