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    Growth and hydrostatic pressure study of the single-crystal type-II superconductor Bi2Ta3S6

    Chenglin Li1,2,*, Yaling Yang1,2,*, Zhilong Yang3,*, Junze Deng4, Ruihan Zhang1,2, Weiwei Chen1,2, Yue Pan1,2, Yulong Wang1,2, Xuhui Wang1,2 et al.

    Bosen Wang1,2, Zhijun Wang1,5,†, and Gang Wang1,‡

    • *These authors contributed equally to this work.
    • †Contact author: wzj@iphy.ac.cn
    • ‡Contact author: gangwang@iphy.ac.cn

    Phys. Rev. B 114, 034504 – Published 6 July, 2026

    DOI: https://doi.org/10.1103/q44s-63jc

    Abstract

    We report the growth and physical properties of single-crystalline Bi2Ta3S6 crystallizing in the P63/mcm space group, which comprises alternating Ta-S layers and Bi layers with each Bi atom connected to adjacent S atoms. Temperature-dependent electrical resistivity measurements reveal a superconducting transition at 0.84 K, with an upper critical field of 231 Oe under an out-of-plane magnetic field. Magnetization measurements confirm its nature as a type-II superconductor, with anisotropic Ginzburg-Landau parameters κab=7.67 and κc=4.50. Hall measurements reveal holes as the dominant species of charge carriers at room temperature. Hydrostatic pressure is applied, under which both the superconducting transition temperature and upper critical field increase sharply under low pressure before undergoing slight suppression under higher pressure. DFT calculations reveal nontrivial topological surface states on the (100) surface in Bi2Ta3S6, which may offer a new avenue for exploring potential topological superconductivity in layered transition metal dichalcogenides.

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