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    Effects of electron-electron interactions on quasiparticle properties in transition metal dichalcogenide monolayers

    Nguyen Truong Co

    Le Thi Ngoc Bao

    H. N. T. Phung

    Le Van Tan*

    • Hue University of Sciences, Hue University, 77 Nguyen Hue Street, Hue City, Vietnam

    • Faculty of Natural Sciences and Technology, Tay Nguyen University, 567 Le Duan Street, Ea Kao Ward, Dak Lak Province, Vietnam

    • Laboratory of Applied Physics, Science and Technology Advanced Institute, Van Lang University, Ho Chi Minh City, Vietnam and Faculty of Applied Technology, Van Lang School of Technology, Van Lang University, Ho Chi Minh City, Vietnam

    • *Contact author: levantan@vlu.edu.vn

    Phys. Rev. B 112, 235409 – Published 5 December, 2025

    DOI: https://doi.org/10.1103/q18p-1mbk

    Abstract

    Coulomb-driven renormalization of electronic spectra in monolayer transition-metal dichalcogenides (TMDCs) remains poorly understood at finite temperature. Using the Rytova-Keldysh potential with a nonlocal dielectric response, we calculate quasiparticle band-gap renormalization (BGR) and the Fermi-edge absorption spectrum over experimentally relevant carrier densities and temperatures. Exchange and correlation self-energies are treated successively within Hartree-Fock (HF), the random-phase approximation (RPA), and the Hubbard local-field approximation (HFA). Only the HFA, which embeds the G(q) local-field factor, reproduces recent temperature- and density-resolved measurements: it broadens the band gap at low densities and produces a density-induced redshift of the Fermi absorption edge through enhanced screening. The same framework accounts for the nonmonotonic BGR observed in cyclotron resonance experiments on disordered monolayers when disorder-induced thermal broadening is included. The results establish a local-field-corrected many-body theory as the minimal quantitative description of carrier-doped TMDCs and provide a roadmap for engineering interaction-driven electronic phases in two dimensions.

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