Spin-orbit coupling induced Rashba effect of heterostructure with spin carrier dynamics under pressure
Phys. Rev. B 112, 165107 – Published 6 October, 2025
DOI: https://doi.org/10.1103/pqxr-f78r
Abstract
Lead-free vacancy ordered double perovskite materials are of interest in photovoltaic field from their excellent stability and long carrier lifetime. However, the consequences of the spin-orbit coupling (SOC) induced Rashba effect on the photovoltaic performance are not well understood. Herein, the SOC inducing spin carrier dynamics of heterostructure are investigated through density functional theory (DFT) and ab initio nonadiabatic molecular dynamics (NAMD) with SOC simulation. It has been found that the heterostructure exhibits Rashba effect due to symmetry breaking. The electronic and spin properties of heterostructure are tunable via applying pressure, resulting in Rashba spin-splitting. As pressure increases, the heterostructure exhibits stronger Rashba effect, which Rashba constant for conduction band minimum and valence band maximum are and under 9 GPa. Based on DFT and NAMD calculations, we demonstrate that the carrier recombination rate is reduced due to mismatch spin-states and electron-phonon coupling larger than SOC values, resulting in spin-forbidden path. The carrier lifetime enhancement factor is linear with the pressure inducing Rashba effect magnitude. The proposed spin carrier transfer mechanism is important for understanding the fundamental physics in perovskite materials and for designing perovskite-based solar cells with better performance.
Physics Subject Headings (PhySH)
Corrections
29 October, 2025
Correction: An erroneous curly brace was inserted in Eq. (10) during the production process and has been removed.