Room-temperature intrinsic anomalous Hall effect and robust half-metallicity in the quaternary Heusler alloy CoRuFeSi
Phys. Rev. B 113, 205122 – Published 8 May, 2026
DOI: https://doi.org/10.1103/pfnb-pwmz
Abstract
We report a comprehensive study of the magnetic, magnetotransport, and Hall transport properties of the quaternary Heusler alloy CoRuFeSi. The compound has a saturation magnetization of 4.21 /f.u. and is classified as a soft ferromagnet at room temperature. The longitudinal resistivity exhibits an upturn at low temperatures, a signature of electron-electron interactions. Further, half-metallic nature is supported by the absence of a quadratic temperature dependency at higher temperatures, which agrees well with first-principles electronic structure calculations. A key finding of this work is the observation of a nearly temperature-independent anomalous Hall conductivity of S/cm at room temperature, dominated by the intrinsic contribution. First-principles calculations reveal a nodal-line semimetallic electronic structure, and inclusion of Co-Ru antisite disorder yields intrinsic anomalous Hall conductivity in excellent agreement with experiment, highlighting the role of disorder in tuning Berry curvature. These results establish CoRuFeSi as a disorder-tolerant half-metal with a robust anomalous Hall response at room temperature, providing insight into the interplay between disorder, topology, and transport in quaternary Heusler systems and highlighting its potential for spintronic applications.