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    Phase-dependent electronic, optical, and phonon transport properties in ZrSi2N4 monolayers

    Ghulam Hussain1,2,*, Rajibul Islam3, Ata Ur Rahman4,5, Muhammad Rizwan Khan1,2, Zheng Wang1,†, Carmine Autieri6, and Xiaoguang Li1,‡

    • 1Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
    • 2Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060 China
    • 3Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294, USA
    • 4THz Technology Laboratory, Shenzhen Key Laboratory of Micro-nano Photonic Information Technology, Shenzhen University, Shenzhen 518060, China
    • 5Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
    • 6International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland

    • *Contact author: ghussain@szu.edu.cn
    • †Contact author: chzwang@szu.edu.cn
    • ‡Contact author: xgli@szu.edu.cn

    Phys. Rev. B 112, 014112 – Published 24 July, 2025

    DOI: https://doi.org/10.1103/pbdm-m1n1

    Abstract

    Two-dimensional materials have been recognized as highly promising in next-generation optoelectronic devices and thermal management applications. In this study, we explore two distinct structural phases, 2H and 1T, to elucidate the impact of structural modifications on the electro-optical and thermal transport properties of ZrSi2N4 monolayer. Our results reveal remarkable differences in the electronic band structure and density of states between the trigonal prismatic (2H-phase) and octahedral (1T-phase) coordination of Zr atoms. The band gap decreases from 2.736 eV (2H phase) to 2.233 eV (1T phase), accompanied by momentum shift in the valence band maximum at high-symmetry points in the Brillouin zone. Also, the effective masses of electrons and holes are substantially lowered in specific directions for the 1T phase indicating improved carrier mobility. Besides, Young's modulus increases while the dielectric constant decreases due to octahedral coordination of Zr atoms in the 1T phase. Moreover, the optical absorption spectra are significantly tuned due to distinct charge localization in the respective structural phases. Intriguingly, a notable enhancement in lattice thermal conductivity is observed for the 1T phase at room temperature owing to increased phonon lifetimes (reduced anharmonic phonon-phonon scattering rates), increased bonding strength, and phonon group velocities. These results provide comprehensive insights into the phase-dependent electro-optical properties, highlighting their potential in optoelectronic devices. On top of that, the exceptional thermal conductivities and their tunable nature across the two polymorphic forms of ZrSi2N4 unlock exciting opportunities for designing advanced two-dimensional materials, offering ground-breaking potential in thermal management and heat dissipation technologies.

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