Yoshiya Uwatoko⁶, Quansheng Wu^1,2,†, Genfu Chen^1,2,7,‡, Bosen Wang^1,2,§, and Jinguang Cheng^1,2,∥

• ¹Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
• ²School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
• ³State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
• ⁴Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
• ⁵Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
• ⁶Institute for Solid State Physics, University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277–8581, Japan
• ⁷Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

• ^*These authors contributed equally to this work.
• ^†Contact author: quansheng.wu@iphy.ac.cn
• ^‡Contact author: gfchen@iphy.ac.cn
• ^§Contact author: bswang@iphy.ac.cn
• ^∥Contact author: jgcheng@iphy.ac.cn