Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the practical application of magnon devices demands room-temperature operation and low switching power of perpendicular magnetization. Here we demonstrate the low-power manipulation of perpendicular magnetization via magnon torques in SnTe/NiO/CoFeB devices at room temperature. Topological crystalline insulator SnTe exhibits a high spin Hall conductivity of ${\sigma }_s\approx 6.1\times {10}^4\left(\hslash /2e\right){\left(\mathrm{\Omega }\mathrm{m}\right)}^{-1}$, which facilitates the generation of magnon currents in an antiferromagnetic insulator NiO. The magnon currents traverse the 20-nm-thick NiO layer and subsequently exert magnon torque on the adjacent ferromagnetic layer, leading to magnetization switching. Notably, we achieve a 22-fold reduction in power consumption in SnTe/NiO/CoFeB heterostructures compared to ${\mathrm{Bi}}_2{\mathrm{Te}}_3/\mathrm{NiO}/\mathrm{CoFeB}$ control samples. Our findings establish the low-power perpendicular magnetization manipulation through magnon torques, significantly expanding the range of topological materials with practical applications.

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• Magnons
• Spin-orbit torque
• Thin films
• Topological materials
• Molecular beam epitaxy
• Transport techniques