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    Crystal symmetry paired spin-valley locking in the monolayered K2V2Se2O altermagnet

    Hui Zeng1, Weijie Zhang1, Jun Zhao2,*, and Dazhi Ding1,†

    • *Contact author: zhaojun@njupt.edu.cn
    • †Contact author: dzding@njust.edu.cn

    Phys. Rev. B 113, 104405 – Published 3 March, 2026

    DOI: https://doi.org/10.1103/ny8k-98js

    Abstract

    The altermagnet (AM), characterized by zero net magnetization combined with momentum-dependent spin polarization, is regarded as a new type of collinear magnet and has attracted increasing interest since the fundamental concept of altermagnetism was established. Although many AM candidates have been theoretically proposed, most experimentally confirmed AM candidates are semiconductors. More recently, a metallic AM candidate of the bulk KV2Se2O was experimentally identified to have Fermi surface and altermagnetic spin splitting features. It is anticipated that the two-dimensional (2D) monolayer counterpart can be fabricated by mechanical exfoliation of the KV2Se2O bulk compound. Here, we present our first principles calculations to demonstrate that the corresponding 2D K2V2Se2O monolayer has an increased lattice constant and excellent stability at room temperature. Most importantly, the K2V2Se2O monolayer manifests as an altermagnetic semiconductor with an out of plane magnetization axis and its Néel temperature is approximately 580 K. The exfoliation of the KV2Se2O bulk into the K2V2Se2O monolayer probably leads to the 2D AM semiconductor consisting of spin-valley locking at the X or Y valley. It is anticipated that a giant piezovalley effect of 0.15 eV valley polarization can be obtained by using a 2% anisotropic strain to break the diagonal mirror symmetry. Our findings provide a promising AM candidate for valleytronics and spintronics at room temperature.

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