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    Geometric percolation threshold defines half-metallic window in vacancy-doped TiS2

    Shrestha Dutta and Rudra Banerjee*

    • *Contact author: rudrab@srmist.edu.in

    Phys. Rev. B 113, 174107 – Published 14 May, 2026

    DOI: https://doi.org/10.1103/nt5p-5n1p

    Abstract

    Defect engineering of two-dimensional materials routinely produces local magnetic moments, yet itinerant half-metallic ferromagnetism remains elusive—experiments frequently yield paramagnetic insulators. We resolve this paradox for vacancy-doped monolayer 1T−TiS2 by demonstrating that the insulator-to-half-metal transition is governed by universal geometric percolation of the defect network, extending the percolation framework established for three-dimensional diluted magnetic semiconductors into the 2D vacancy-doped regime. Half-metallicity emerges via a two-step mechanism: Crystal-field symmetry breaking (Oh→C4v) selectively stabilizes the Ti 3dz2 orbital, generating robust local moments (0.94µB), but spin-polarized transport requires these moments to form a spanning cluster. At critical vacancy concentration xc≈12.5%, a percolation transition drives the majority-spin impurity band from flat, localized levels (W<0.1eV) to a dispersive 1.5-eV wide band with 100% spin polarization and a minority-spin gap of 1.0 eV. Finite-size scaling yields a Fisher exponent τ=2.09±0.03, confirmed by fractal scaling of ab initio charge densities (τeffDFT=1.87±0.26), placing the transition in the 2D percolation universality class. The percolation mechanism is independently corroborated by a striking supercell-size effect: at identical concentration, 2×2 cells yield antiferromagnetic order while 4×4 cells mandate ferromagnetism, reflecting the presence or absence of a spanning cluster. We estimate a Curie temperature exceeding 300 K from the exchange coupling, and identify a geometric jamming instability at x>20% that fragments the network. These results define a narrow functional window (11%<x<15%) for half-metallic operation and establish geometric connectivity as a quantitative design principle for defect-engineered 2D spintronics.

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