Geometric percolation threshold defines half-metallic window in vacancy-doped
Phys. Rev. B 113, 174107 – Published 14 May, 2026
DOI: https://doi.org/10.1103/nt5p-5n1p
Abstract
Defect engineering of two-dimensional materials routinely produces local magnetic moments, yet itinerant half-metallic ferromagnetism remains elusive—experiments frequently yield paramagnetic insulators. We resolve this paradox for vacancy-doped monolayer by demonstrating that the insulator-to-half-metal transition is governed by universal geometric percolation of the defect network, extending the percolation framework established for three-dimensional diluted magnetic semiconductors into the 2D vacancy-doped regime. Half-metallicity emerges via a two-step mechanism: Crystal-field symmetry breaking () selectively stabilizes the Ti orbital, generating robust local moments (), but spin-polarized transport requires these moments to form a spanning cluster. At critical vacancy concentration , a percolation transition drives the majority-spin impurity band from flat, localized levels () to a dispersive 1.5-eV wide band with 100% spin polarization and a minority-spin gap of 1.0 eV. Finite-size scaling yields a Fisher exponent , confirmed by fractal scaling of ab initio charge densities (), placing the transition in the 2D percolation universality class. The percolation mechanism is independently corroborated by a striking supercell-size effect: at identical concentration, cells yield antiferromagnetic order while cells mandate ferromagnetism, reflecting the presence or absence of a spanning cluster. We estimate a Curie temperature exceeding 300 K from the exchange coupling, and identify a geometric jamming instability at that fragments the network. These results define a narrow functional window () for half-metallic operation and establish geometric connectivity as a quantitative design principle for defect-engineered 2D spintronics.