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    Critical thickness for antiferroelectric-like phase transition in BiFeO3/SrRuO3 superlattices

    Ran Xu1,*, Bing Wang2, Charles Paillard3,4, and Chengyan Liu1,†

    • 1Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475001, China
    • 2Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China
    • 3Smart Ferroic Materials Center, Institute for Nanoscience and Engineering and Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
    • 4Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette 91190, France

    • *Contact author: ran.xu@henu.edu.cn
    • †Contact author: cyliu@henu.edu.cn

    Phys. Rev. B 113, 184109 – Published 6 May, 2026

    DOI: https://doi.org/10.1103/ngm3-srtn

    Abstract

    Recently, antiferroelectric-like behavior has been unexpectedly observed in several studies on BiFeO3 (BFO) thin films and superlattices; however, this phenomenon has still received limited attention. In this work, we investigate n/n BiFeO3/SrRuO3 (BFO/SRO) multiferroic-metal superlattices based on density functional theory (DFT) calculations. Two complex polar ordering states were identified in the BFO/SRO superlattices, characterized by an in-plane polar order (IP phase) and an in-plane antipolar order (IAP phase). Meanwhile, both phases exhibit out-of-plane polar displacements, even in ultrashort-period superlattices. As the layer thickness increases up to n=5, the ground state transitions from the IP phase to the IAP phase. This process is analogous to a ferroelectric-to-antiferroelectric phase transition along the in-plane direction. The emergence of the antiferroelectric-like IAP phase is closely linked to the modulation of electrostatic boundary conditions. Furthermore, our analysis of the depolarization field with increasing layer thickness reveals a competition between the metallic screening effect and the depolarization field. This study provides insights for modulating the potential antiferroelectric-like phase in BFO-based electronic nanodevices.

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