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    High-root topological edge-state bands

    R. G. Dias1,*, L. Madail1,2, and A. M. Marques1

    • *Contact author: rdias@ua.pt

    Phys. Rev. B 112, 075125 – Published 13 August, 2025

    DOI: https://doi.org/10.1103/nf7r-9wb6

    Abstract

    This paper presents a complex band analysis of one-dimensional (1D) square and high-root topological insulators (HRTIs). We show that edge-state bands of HRTIs are sliced sections of impurity bands of a uniform tight-binding chain. A simplified topological characterization of HRTIs with generalized boundary conditions is carried out based on the existence of edge-state bands in the infinite HRTI and the restrictions imposed by the boundary conditions. Edge states in finite or semi-infinite 1D HRTIs are shown to be a subset of evanescent states of the infinite system and mapped onto impurity states of the uniform chain with effective energy-dependent edge potentials. The latter result allows the determination of the edge-state levels without needing the diagonalization of real space or bulk Hamiltonians.

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