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Floquet-driven thermal transport in topological Haldane lattice systems

Imtiaz Khan1,2, Muzamil Shah3,4,*, A. Uzair5, Reza Asgari1,6, and Gao Xianlong1,†

  • *Contact author: muzamil@qau.edu.pk
  • †Contact author: gaoxl@zjnu.edu.cn
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Phys. Rev. B 114, 115421 – Published 31 August, 2026

DOI: https://doi.org/10.1103/mz41-3337

Abstract

In this paper, we employ a modified Haldane lattice model to investigate the light-driven, spin- and valley-dependent anomalous Nernst effect in two-dimensional hexagonal topological systems. We demonstrate that two-dimensional buckled materials exhibit a hierarchy of electrically and optically tunable topological phases when subjected to off-resonant circularly polarized light in the presence of intrinsic spin–orbit coupling and a staggered sublattice potential. Within a Berry-curvature-driven transport framework, we systematically analyze charge-, spin-, and valley-resolved anomalous Nernst responses and identify their correspondence with distinct topological regimes. A finite charge Nernst conductivity arises under optical driving combined with spin–orbit coupling, whereas the generation of a pure valley Nernst current requires the simultaneous presence of sublattice asymmetry and off-resonant light. Substrate-induced inversion asymmetry further enables thermally driven valley currents with tunable magnitude and sign. We find that single-spin and single-valley Nernst responses occur in selected insulating and metallic phases, while the valley Nernst signal is suppressed in spin-polarized and anomalous quantum Hall phases. Extending our analysis to monolayer MoS2, we show that strong spin–orbit coupling and broken inversion symmetry allow fully spin- and valley-polarized Nernst currents over a broad energy window. The temperature dependence of the Nernst response exhibits characteristic signatures of topological phase transitions, establishing the anomalous Nernst effect as a sensitive probe of field-engineered band topology in two-dimensional Dirac materials.

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Phys. Rev. B 114, 115421– Published 31 August, 2026
  • Received 25 March 2026
  • Revised 8 June 2026
  • Accepted 30 July 2026
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