The Nernst effect is a versatile phenomenon relevant for energy harvesting, magnetic sensing, probing band topology, and charge-neutral excitations. The planar Nernst effect (PNE) generates an in-plane voltage transverse to an applied temperature gradient under an in-plane magnetic field. Conventional Berry curvature (BC)-induced PNE is absent in two-dimensional (2D) systems, as the out-of-plane BC does not couple to the in-plane electron velocity. Here, we challenge this notion by demonstrating a distinct PNE in quasi-2D materials (2DPNE). We show that the 2DPNE originates from previously overlooked planar components of BC and orbital magnetic moment, arising from interlayer tunneling in multilayered 2D systems. We comprehensively analyze the band-geometric origin and crystalline symmetry constraints on 2DPNE responses. We illustrate its experimental feasibility in strained bilayer graphene. Our findings significantly expand the theoretical understanding of PNEs, providing a clear pathway for next-generation magnetic sensing and energy-harvesting applications.

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• Thermoelectric effects
• Dirac semimetal
• Layered semiconductors
• Boltzmann theory