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    Spin-triplet Ga-vacancy defects in two-dimensional GaN: A platform for solid-state qubits

    Manqi You1,2, Chaoyu He1,2,*, Gencai Guo1,2,†, Chunxiao Zhang3, and Jianxin Zhong1,2,‡

    • 1Institute for Quantum Science and Technology, Shanghai University, Shanghai 200444, China
    • 2Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411100, China
    • 3School of Physics and Optoelectronic Engineering, Shandong University of Technology, Shandong 255000, China

    • *Contact author: hechaoyu@xtu.edu.cn
    • †Contact author: ggc@xtu.edu.cn
    • ‡Contact author: jxzhong@shu.edu.cn

    Phys. Rev. B 113, 054113 – Published 23 February, 2026

    DOI: https://doi.org/10.1103/mn6k-bcnr

    Abstract

    Color centers have been realized in various bulk materials such as diamond and have demonstrated remarkable performance in quantum technologies. However, their applications remain constrained by challenges in photon extraction, precise spatial positioning, and integration into scalable devices. Two-dimensional (2D) materials offer a promising route to overcome these limitations, providing an atomically thin platform well suited for defect engineering. In this work, based on first-principles calculations, we identify multiple types of defects in recently synthesized wide band gap 2D GaN, namely, VGa, VGaCN, and VGaON, as promising candidates for qubit applications. These defects exhibit well-defined electronic transition pathways within the band gap, with zero-phonon lines located in the visible to near-infrared fluorescence range (697–1000 nm), enabling precise optical excitation. The large transition dipole moment and short radiative lifetime (1.787–14.485 ns) in these defects indicate high photoluminescence quantum yields for single-photon sources. In particular, VGa possesses a spin-triplet ground state analogous to the NV− center in diamond with a zero-field splitting of 2.43 GHz, allowing control via S-band microwave radiation. Moreover, the high Debye-Waller factors of VGa (0.349) and VGaON (0.409) indicate strong optical coherence, making them highly suitable for qubit applications. The hyperfine parameters of VGa, VGaCN, and VGaON induced by nuclear spins enable the possibility of controlling nuclear spin qubits and offer valuable references for applications such as optically detected magnetic resonance.

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