Antiferromagnetic materials feature zero net magnetization, robustness against external magnetic fields, negligible stray fields, and ultrafast terahertz spin dynamics, making them promising candidates for spin-based applications. However, the measurement of the Néel order for antiferromagnets with $\mathcal{PT}$ symmetry remains a challenge for existing experimental techniques. In this Letter, we propose an electrical method to detect the Néel order in $\mathcal{PT}$-symmetry-protected $\gamma$-FeMn by constructing a ${\mathrm{Cu}}_3\mathrm{Al}|\gamma$-FeMn interface. In which, we observe that the anomalous Hall current and spin-transfer torque are all strongly coupled to the Néel order. Moreover, we extend the tensor theory to describe the relationship between the Néel order and the transport properties under interface-induced symmetry breaking. This theory agrees well with our calculated results, demonstrating that interface symmetry breaking is essential for detecting the Néel order. Our results show that the detection and manipulation of antiferromagnets can be achieved using only electrical methods, facilitating the development of nonvolatile spin memory and logic devices.

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• Anomalous Hall effect
• Spin transfer torque
• Antiferromagnets
• Interfaces
• First-principles calculations