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    Depth-dependent electronic states of Fe3O4 across the Verwey transition studied by hard x-ray photoemission spectroscopy

    Shigenori Ueda1,2,*, Azusa N. Hattori3, and Hidekazu Tanaka3

    • *Contact author: UEDA.Shigenori@nims.go.jp

    Phys. Rev. B 114, 285103 – Published 2 November, 2026

    DOI: https://doi.org/10.1103/lyp6-ctpz

    Abstract

    Depth-dependent electronic states of a prototypical strongly correlated Fe3O4 thin film across the Verwey transition temperature (TV∼125K) were investigated by hard x-ray photoemission spectroscopy (HAXPES) combined with x-ray total reflection (TR). We found that the Fe 2p HAXPES spectral shapes strongly depend on the effective inelastic mean-free-path (λeff) regardless of temperature (T). Particularly, the shoulder structure located at the lower binding energy side of the Fe 2p3/2 main peak becomes more pronounced with increasing λeff (i.e., increasing bulk sensitivity), indicating a significant difference in the electronic structures between the surface and deeper regions of the film. This trend coincides with the increase of the density of states near the Fermi level (EF) for larger λeff, suggesting the contribution of nonlocal screening effects. While the valence band spectra show a clear metal-to-insulator transition across TV, the Fe 2p core-level HAXPES and the magnetic circular dichroism profiles for large λeff are almost independent on T. This behavior suggests that the average valence of the B-site Fe species is maintained at 2.5+ across TV. Comparison with the configuration interaction theory based on the cluster model calculations emphasizes the importance of nonlocal screening effects in the Fe 2p spectral shapes. Our results demonstrate that HAXPES combined with TR is a powerful technique for probing systematic depth-dependent electronic states. By providing this systematic dataset from the surface to deeper regions, this work serves as a reliable benchmark for the research field.

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