Depth-dependent electronic states of across the Verwey transition studied by hard x-ray photoemission spectroscopy
Phys. Rev. B 114, 285103 – Published 2 November, 2026
DOI: https://doi.org/10.1103/lyp6-ctpz
Abstract
Depth-dependent electronic states of a prototypical strongly correlated thin film across the Verwey transition temperature were investigated by hard x-ray photoemission spectroscopy (HAXPES) combined with x-ray total reflection (TR). We found that the Fe HAXPES spectral shapes strongly depend on the effective inelastic mean-free-path () regardless of temperature (). Particularly, the shoulder structure located at the lower binding energy side of the Fe main peak becomes more pronounced with increasing (i.e., increasing bulk sensitivity), indicating a significant difference in the electronic structures between the surface and deeper regions of the film. This trend coincides with the increase of the density of states near the Fermi level for larger , suggesting the contribution of nonlocal screening effects. While the valence band spectra show a clear metal-to-insulator transition across , the Fe core-level HAXPES and the magnetic circular dichroism profiles for large are almost independent on . This behavior suggests that the average valence of the -site Fe species is maintained at 2.5+ across . Comparison with the configuration interaction theory based on the cluster model calculations emphasizes the importance of nonlocal screening effects in the Fe spectral shapes. Our results demonstrate that HAXPES combined with TR is a powerful technique for probing systematic depth-dependent electronic states. By providing this systematic dataset from the surface to deeper regions, this work serves as a reliable benchmark for the research field.