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Erratum: Charge-state stability of color centers in wide band gap semiconductors [Phys. Rev. B 108, 235208 (2023)]

Rodrick Kuate Defo, Alejandro W. Rodriguez, and Steven L. Richardson

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Phys. Rev. B 114, 169901 – Published 16 September, 2026

DOI: https://doi.org/10.1103/lwfx-t7xk

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Original Article

Charge-state stability of color centers in wide band gap semiconductors

Rodrick Kuate Defo, Alejandro W. Rodriguez, and Steven L. Richardson
Phys. Rev. B 108, 235208 (2023)

References (4)

  1. R. Kuate Defo, A. W. Rodriguez, E. Kaxiras, and S. L. Richardson, Theoretical investigation of charge transfer between two defects in a wide band gap semiconductor, Phys. Rev. B 107, 125305 (2023).
  2. Z. Yuan, M. Fitzpatrick, L. V. H. Rodgers, S. Sangtawesin, S. Srinivasan, and N. P. de Leon, Charge state dynamics and optically detected electron spin resonance contrast of shallow nitrogen-vacancy centers in diamond, Phys. Rev. Res. 2, 033263 (2020).
  3. S. J. Sque, R. Jones, and P. R. Briddon, Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces, Phys. Rev. B 73, 085313 (2006).
  4. D. A. Broadway, N. Dontschuk, A. Tsai, S. E. Lillie, C. T. K. Lew, J. C. McCallum, B. C. Johnson, M. W. Doherty, A. Stacey, L. C. L. Hollenberg, and J. P. Tetienne, Spatial mapping of band bending in semiconductor devices using in situ quantum sensors, Nat. Electron. 1, 502 (2018).

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Phys. Rev. B 114, 169901– Published 16 September, 2026
  • Received 5 August 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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