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    Nanoscale modulation of flat bands via controllable charge density wave defects in 4Hb−TaS2

    Wooin Yang1,2, S Karbasizadeh3, Hoyeon Jeon1, Saban Hus1, Arthur P. Baddorf1, Sai Mu3, Tom Berlijn1, Haidong Zhou2, Wonhee Ko2,4,* et al.

    An-Ping Li1,2,†

    • *Contact author: wko@utk.edu
    • †Contact author: apli@ornl.gov

    Phys. Rev. B 112, 245126 – Published 11 December, 2025

    DOI: https://doi.org/10.1103/lw6k-m6df

    Abstract

    Electron correlation is a main driver of exotic quantum phases and their interplay. The 4Hb−TaS2 system, possessing an intrinsic heterostructure of 1T- and 1H−TaS2 monolayers, offers a unique opportunity to control electron correlation by distorting the atomic lattice or tuning interlayer coupling. Here, we investigated intrinsically deformed charge-density waves (CDWs) in the 1T layer of 4Hb−TaS2 to elucidate and control their effects on flat bands using scanning tunneling microscopy and spectroscopy (STM/S) combined with first-principles calculations. We identified two types of CDW defects: Type 1 has structural distortion and locally suppressed flat bands, while Type 2 features an increased flat band filling factor of intact CDW structure. Density functional theory calculations indicate that a sulfur vacancy in the 1T layer distorts the CDW structure and gives rise to a Type 1, whereas a sulfur vacancy in the 1H layer reduces the interlayer charge transfer and leads to a Type 2. Furthermore, we demonstrated creating and erasing individual CDW defects via STM manipulation. Our findings provide a pathway to not only tune flat bands but also selectively manipulate the interaction between CDW, the atomic lattice, and interlayer coupling in strongly correlated systems with atomic precision.

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