Recently, various Hall effects in different tunneling junctions have attracted many researchers because of their significant physical properties and potential device applications. Here, we investigate three types of tunneling Hall effects in a $1T^{\prime }\text{−}{\mathrm{MoS}}_2$-based $n\text{−}p\text{−}n$ junction modulated by a vertical electric field and a circularly polarized off-resonant light field. At first, the tunneling valley Hall effect is found without any external fields. Then, the tunneling spin-valley locking Hall effect appears by tuning the vertical electric field. Finally, the tunneling spin-valley polarized Hall effect exists through the competition between an electric field and a circularly polarized off-resonant light field. All the tunneling Hall effects above arise from the tilted and anisotropic band structure of monolayer $1T^{\prime }\text{−}{\mathrm{MoS}}_2$. We further establish a formula, named purity, to characterize the degree of perfection of these tunneling Hall effects. Our work provides an approach to manipulate the spin- and valley-related tunneling Hall effects without relying on Berry curvature, holding promise for applications in both spintronics and valleytronics.

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• Hall effect
• Transport phenomena
• 2-dimensional systems
• Transition metal dichalcogenides
• Tunnel junctions
• Methods in transport