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Chern junctions in moiré-patterned graphene/
Phys. Rev. B 113, 155425 – Published 15 April, 2026
DOI: https://doi.org/10.1103/lngp-twfc
Abstract
Expanding the moiré material library continues to reveal novel quantum phases and emergent electronic behaviors. Here we introduce into the moiré family and investigate the magnetotransport properties of a hexagonal boron nitride/graphene/ heterostructure. In the high-field quantum Hall regime, we observe robust dissipationless transport at the charge neutrality point, indicative of incompressible states at filling factor . A fractional conductance plateau at emerges, which we attribute to a Chern junction formed between domains with distinct Chern numbers arising from moiré-modulated and conventional quantum Hall states. Additionally, coherent electronic interference appears along trajectories associated with the Chern state. These observations provide compelling evidence for the formation of moiré domains that nontrivially interrupt incompressible quantum Hall states, reflecting the strong moiré potential in the BN/graphene/ superlattice. We suggest that the moiré Hofstadter spectrum coupled with the proximity-induced spin-orbit interaction from gives rise to a high magnetic field topological insulator phase explaining ballistic transport at the charge neutrality point in the graphene monolayer.
Physics Subject Headings (PhySH)
synopsis
New Material Joins Moiré Family
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