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Chern junctions in moiré-patterned graphene/PbI2

Yan Sun1, M. Monteverde1, V. Derkach2, K. Watanabe3, T. Taniguchi4, F. Chiodi5, H. Bouchiat1, and A. D. Chepelianskii1

Phys. Rev. B 113, 155425 – Published 15 April, 2026

DOI: https://doi.org/10.1103/lngp-twfc

Abstract

Expanding the moiré material library continues to reveal novel quantum phases and emergent electronic behaviors. Here we introduce PbI2 into the moiré family and investigate the magnetotransport properties of a hexagonal boron nitride/graphene/PbI2 heterostructure. In the high-field quantum Hall regime, we observe robust dissipationless transport at the charge neutrality point, indicative of incompressible states at filling factor νh=0. A fractional conductance plateau at 2/3,e2/h emerges, which we attribute to a Chern junction formed between domains with distinct Chern numbers arising from moiré-modulated and conventional quantum Hall states. Additionally, coherent electronic interference appears along trajectories associated with the νm=−2 Chern state. These observations provide compelling evidence for the formation of moiré domains that nontrivially interrupt incompressible quantum Hall states, reflecting the strong moiré potential in the BN/graphene/PbI2 superlattice. We suggest that the moiré Hofstadter spectrum coupled with the proximity-induced spin-orbit interaction from PbI2 gives rise to a high magnetic field topological insulator phase explaining ballistic transport at the charge neutrality point in the graphene monolayer.

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synopsis

New Material Joins Moiré Family

Published 15 April, 2026

Moiré systems incorporating lead iodide can host exotic quantum states and enable near-lossless electrical transport.

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