Signatures of two ferromagnetic states and goniopolarity in in the Hall effect
Phys. Rev. B 113, 144409 – Published 3 April, 2026
DOI: https://doi.org/10.1103/lg4x-2xfp
Abstract
has become a playground to understand quantum critical phenomena in ferromagnetic (FM) materials. It has also garnered attention due to its peculiar two FM phases. Here, we demonstrate the presence of these phases using the Hall effect. Continuous temperature-dependent Hall resistivity measurements at fixed magnetic fields clearly demonstrate the presence of these phases, regardless of the direction of the applied magnetic field. The remanent Hall resistivity and Hall coefficient undergo a maximum and a minimum, respectively, at the boundary between the two phases. We observe a significantly large anomalous Hall conductivity of 1160 at 2 K when the magnetic field is applied along the magnetic easy axis, which is dominated by intrinsic effects, at least in the low-temperature FM phase. In the paramagnetic (PM) phase, hexagonal exhibits opposite charge carrier polarities along different crystallographic directions, attributed to the anisotropic Fermi surface geometry, a phenomenon known as “goniopolarity”. The coexistence of goniopolar transport and unconventional magnetic phases may lead this material as a promising candidate for future electronic devices.